- Submission opens:
May 10, 2012 - Submission deadline:
July 15, 2012 - Acceptance notice:
August 31, 2012 - Reduced fee deadline:
October 1, 2012 - Online registration:
October 17, 2012 - TaCoNa-Photonics:
October 24-26, 2012
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TaCoNa-Photonics 2010Semiconductor Surface Plasmon Amplifier Based on a Schottky Barrier DiodeDmitry Fedyanin1, Aleksey Arsenin11Laboratory of Nanooptics and Femtosecond Electronics, Moscow Institute of Physics and Technology, Russian Federation Abstract: We propose a novel scheme of the semiconductor surface plasmon amplifier. It is based on a minority carrier injection in a metal–insulator–semiconductor diode. The principle of operation is as follows. Excess electrons and holes recombine radiatively and emit photons. If the difference between quasi-Fermi levels exceeds the bandgap, the surface plasmon plasmon polariton (SPP) is amplified. A compact size and a planar structure of the amplifier allow to utilize it in integrated optical circuits and couple it easily to passive plasmonic devices. Moreover, the proposed technique can be used to obtain sufrace plasmon lasing by analogy with semiconductor lasers. Presentation type: Poster |
